Datasheet > FDMC6688P

FDMC6688P

更新时间： 2024-11-06 11:11:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	410K
描述
P 沟道，PowerTrench® MOSFET，-20V，-56A，6.5mΩ

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中文翻译

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FDMC6688P 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

MAX

I MAX

DS(on)

−20 V

6.5 mW @ −4.5 V

9.8 mW @ −2.5 V

20 mW @ −1.8 V

−56 A

-20 V, -56 A, 6.5 mW

FDMC6688P

Pin 1

General Description

This P−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been optimized for R

switching performance and ruggedness.

DS(on)

Top

Features

Bottom

 Max R

= 6.5 mW at V = −4.5 V, I = −14 A

GS D

DS(on)

PQFN8 3.3X3.3, 0.65P

(Power 33)

= 9.8 mW at V = −2.5 V, I = −11 A

CASE 483AX

= 20 mW at V = −1.8 V, I = −9 A

 High Performance Trench Technology for Extremely Low R

 High Power and Current Handling Capability in a Widely Used

Surface Mount Package

DS(on)

PIN ASSIGNMENT

 This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

 Load Switch

 Battery Management

 Power Management

 Reverse Polarity Protection

MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted)

MARKING DIAGRAM

Symbol

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Ratings

−20

Unit

8

ZYWWKK

FDMC

6688P

−Continuous, T = 25C

−56

−14

−Continuous, T = 25C (Note 1a)

−Pulsed (Note 3)

−226

Power Dissipation

= 25C

= Assembly Plant Code

T = 25C (Note 1a)

2.3

YWW

FDMC6688P

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

T , T

Operating and Storage Junction

Temperature Range

−55 to +150

C

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Device

FDMC6688P

Package

Shipping

3,000 /

Tape & Reel

THERMAL CHARACTERISTICS (T = 25C unless otherwise noted)

PQFN8

(Power 33)

(Pb−Free)

Symbol

Parameter

Value

3.8

Unit

C/W

Thermal Resistance, Junction to Case

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Thermal Resistance,

Junction to Ambient (Note 1a)

 Semiconductor Components Industries, LLC, 2014

Publication Order Number:

June, 2023 − Rev. 3

FDMC6688P/D

12 3 4 5 6 7

中文翻译

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与FDMC6688P相关器件

型号	品牌	获取价格	描述	数据表
FDMC6890NZ	FAIRCHILD	获取价格	Dual N-Channel PowerTrench MOSFET
FDMC6890NZ	ONSEMI	获取价格	20V双N沟道PowerTrench® MOSFET
FDMC7200	ONSEMI	获取价格	双 N 沟道 PowerTrench® MOSFET 30V，12mΩ 和 23.5mΩ
FDMC7200S	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，30V，22mΩ，10mΩ
FDMC7208S	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，30V
FDMC7208S_12	FAIRCHILD	获取价格	Dual N-Channel PowerTrenchÂ® MOSFET Q1: 30 V,
FDMC7570S	FAIRCHILD	获取价格	N-Channel Power Trench® SyncFET 25 V, 40 A, 2
FDMC7570S	ONSEMI	获取价格	N 沟道 Power Trench® SyncFET™ 25V，40A，2mΩ
FDMC7572S	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® SyncFETTM 25 V, 40 A
FDMC7572S	ONSEMI	获取价格	N 沟道，Power Trench® SyncFET™，25V，40A，3.15mΩ

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