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FDMC6686P PDF预览

FDMC6686P

更新时间: 2024-11-18 11:13:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 318K
描述
P 沟道,PowerTrench® MOSFET,-20V,-56A,4mΩ

FDMC6686P 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:20 weeks风险等级:0.98
Samacsys Description:MOSFET PT8P 20/8V ER PQFN33外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):56 A最大漏极电流 (ID):56 A
最大漏源导通电阻:0.004 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):2010 pFJEDEC-95代码:MO-240BA
JESD-30 代码:S-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):377 A表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):791 ns最大开启时间(吨):162 ns
Base Number Matches:1

FDMC6686P 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – P-Channel,  
POWERTRENCH)  
V
R
MAX  
I MAX  
D
DS  
DS(on)  
−20 V  
4 mW @ −4.5 V  
5.7 mW @ −2.5 V  
11.5 mW @ −1.8 V  
−56 A  
-20 V, -56 A, 4 mW  
FDMC6686P  
Pin 1  
S
S
General Description  
This P−Channel MOSFET is produced using onsemi’s advanced  
Pin 1  
S
G
POWERTRENCH process that has been optimized for R  
switching performance and ruggedness.  
,
DS(ON)  
D
D
D
D
Features  
Bottom  
Top  
Max R  
Max R  
Max R  
= 4 mW at V = −4.5 V, I = 18 A  
GS D  
DS(on)  
DS(on)  
DS(on)  
PQFN8 3.3X3.3, 0.65P  
(Power 33)  
= 5.7 mW at V = −2.5 V, I = 16 A  
GS  
D
CASE 483AX  
=11.5 mW at V = −1.8 V, I = 11 A  
GS  
D
High Performance Trench Technology for Extremely Low R  
High Power and Current Handling Capability in a Widely Used  
Surface Mount Package  
DS(on)  
PIN ASSIGNMENT  
S
8
D
1
2
This Device is Pb−Free, Halide Free and is RoHS Compliant  
Applications  
S
S
7
6
5
D
D
D
Load Switch  
3
4
Battery Management  
Power Management  
Reverse Polarity Protection  
G
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
MARKING DIAGRAM  
Symbol  
Parameter  
Drain to Source Voltage  
Ratings  
Unit  
V
V
DS  
V
GS  
−20  
8
ZYWWKK  
FDMC  
6686P  
Gate to Source Voltage  
Drain Current  
V
I
D
A
− Continuous T = 25°C  
−56  
−18  
−377  
C
− Continuous T = 25°C (Note 1a)  
A
− Pulsed (Note 3)  
Z
= Assembly Plant Code  
= Date Code (Year & Week)  
= Lot Traceability Code  
YWW  
KK  
P
D
Power Dissipation  
W
T
= 25°C  
40  
2.3  
C
T = 25°C (Note 1a)  
FDMC6686P = Specific Device Code  
A
T , T  
Operating and Storage Junction  
Temperature Range  
−55 to +150  
°C  
J
STG  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
3000 /  
Tape & Reel  
FDMC6686P  
PQFN8  
(Power 33)  
(Pb−Free)  
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
Symbol  
Parameter  
Ratings  
3.1  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance, Junction to Case  
°C/W  
R
q
JC  
R
q
JA  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
53  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
June, 2023 − Rev. 3  
FDMC6686P/D  

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