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AUIRFZ44ZS PDF预览

AUIRFZ44ZS

更新时间: 2024-09-09 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
14页 329K
描述
HEXFET? Power MOSFET

AUIRFZ44ZS 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.06其他特性:AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):105 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):51 A最大漏极电流 (ID):51 A
最大漏源导通电阻:0.0139 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AUIRFZ44ZS 数据手册

 浏览型号AUIRFZ44ZS的Datasheet PDF文件第2页浏览型号AUIRFZ44ZS的Datasheet PDF文件第3页浏览型号AUIRFZ44ZS的Datasheet PDF文件第4页浏览型号AUIRFZ44ZS的Datasheet PDF文件第5页浏览型号AUIRFZ44ZS的Datasheet PDF文件第6页浏览型号AUIRFZ44ZS的Datasheet PDF文件第7页 
PD - 97543  
AUIRFZ44Z  
AUIRFZ44ZS  
HEXFET® Power MOSFET  
AUTOMOTIVE GRADE  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
D
V(BR)DSS  
55V  
13.9m  
51A  
RDS(on) max.  
ID  
G
Lead-Free, RoHS Compliant  
Automotive Qualified *  
S
D
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating . These features combine to make  
this design an extremely efficient and reliable device for use  
in Automotive applications and a wide variety of other appli-  
cations.  
S
D
S
D
G
G
D2Pak  
AUIRFZ44ZS  
TO-220AB  
AUIRFZ44Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.  
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power  
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Pulsed Drain Current  
Max.  
51  
Units  
A
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
36  
200  
80  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.53  
± 20  
W/°C  
V
V
GS  
Gate-to-Source Voltage  
EAS  
86  
105  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Typ.  
–––  
Max.  
1.87  
–––  
62  
Units  
°C/W  
Parameter  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  

AUIRFZ44ZS 替代型号

型号 品牌 替代类型 描述 数据表
IRF1010NSTRLPBF INFINEON

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Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44ZSTRRPBF INFINEON

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IRFZ44ZSPBF INFINEON

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