Datasheet > AUIRGC4063B

AUIRGC4063B

更新时间： 2024-09-10 14:49:19

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
5页	120K
描述
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel,

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技术参数
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AUIRGC4063B 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.26	Is Samacsys：	N
最大集电极电流 (IC)：	48 A	集电极-发射极最大电压：	600 V
门极发射器阈值电压最大值：	6.5 V	门极-发射极最大电压：	20 V
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	Insulated Gate BIP Transistors	表面贴装：	YES
Base Number Matches：	1

AUIRGC4063B 数据手册

PD - 97679

AUTOMOTIVE GRADE

AUIRGC4063B

•

100% Tested at Probe *

Features

•

Designed for Automotive Applications**

Low V_{CE (ON)}Trench IGBT Technology

Low switching losses

Maximum junction temperature 175 °C

5 μs SCSOA

SquareRBSOA

n-channel

Positive V_{CE (ON)}temperature co-efficient

Tightparameterdistribution

Benefits

•

High Efficiency in a wide range of applications

•

Suitable for a wide range of switching frequencies due

to low V_{CE (ON)}and low switching losses

Ruggedtransientperformanceforincreasedreliability

Excellent current sharing in parallel operation

Low EMI

•

V_CE

I_Cn

Chip Type

AUIRGC4063B

Die Size

4.32 mm x 5.89 mm

Package

Wafer

600V

48A

Mechanical Parameter

Die Size

4.32 x 5.89

See Die Drawing

0.556 x 0.503

25.44 / 18

Minimum Street Width

Emiter Pad Size (Included Gate Pad)

Gate Pad Size

Area Total / Active

Thickness

μm

mm²

μm

150

Wafer Size

Flat Position

Degrees

Maximum-Possible Chips per Wafer

Passivation Frontside

Front Metal

589 pcs

Silicon Nitride

Al, Si (4μm)

Al (0.1 μm), Ti (0.1 um), Ni (0.4 um), Ag (0.6 μm)

Electrically conductive epoxy or solder

0.25mm diameter minimum

Backside Metal

Die Bond

Reject Ink Dot Size

Recommended Storage Environment

Store in original container, in dry Nitrogen,

<6 months at an ambient temperature of 23°C

Note:

* This IR product is 100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to

restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional

performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and assumed conditions,

and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed package and use

conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established

processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95%

or greater for individual die; however, customer’s results will vary. Estimates such as those described and set forth in this data sheet for

semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an

equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable standard

terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available

upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can

bepurchased as known good die.

** Technology qualified in sup-TO247 package according to AEC-Q101.

www.irf.com

05/31/11

12 3 4 5

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与AUIRGC4063B相关器件

型号	品牌	获取价格	描述	数据表
AUIRGDC025	INFINEON	获取价格	IGBT Planar
AUIRGDC0250	INFINEON	获取价格	汽车低 VCEon 分立 IGBT，采用Super TO-220 封装
AUIRGF66524D0	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
AUIRGP35B60PD	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMP
AUIRGP35B60PD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMP
AUIRGP4062D	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGP4062D1-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel
AUIRGP4063D	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMP
AUIRGP4063D-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMP
AUIRGP4066D1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COM

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