Datasheet > AUIRGB4062D

AUIRGB4062D

更新时间： 2024-09-10 20:05:23

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
16页	621K
描述
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRGB4062D 数据手册

PD - 96353

AUIRGB4062D

AUIRGP4062D

AUIRGP4062D-E

V_CES= 600V

INSULATEDGATEBIPOLARTRANSISTORWITH

ULTRAFASTSOFTRECOVERYDIODE

I_C= 24A, T_C= 100°C

Features

• Low V_{CE (on)}Trench IGBT Technology

• Low Switching Losses

• 5µs SCSOA

t_SC≥ 5µs, T_J(max)= 175°C

• Square RBSOA

V_CE(on)typ. = 1.60V

• 100% of The Parts Tested for I_LM

n-channel

• Positive V_{CE (on)}Temperature Coefficient.

• Ultra Fast Soft Recovery Co-pak Diode

• Tighter Distribution of Parameters

•Lead-Free, RoHS Compliant

•Automotive Qualified *

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due

to Low V_{CE (ON)}and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

• Low EMI

TO-247AD

AUIRGP4062D-E

TO-247AC

AUIRGP4062D

TO-220AB

AUIRGB4062D

Gate

Collector

Emitter

AbsoluteMaximumRatings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified

Parameter

Max.

600

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current, V_GE= 15V

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current, V_GE= 20V

Diode Continous Forward Current

Diode Maximum Forward Current

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

±20

±30

250

125

-55 to +175

V_GE

P_D@ T_C= 25°C

_D@ T_C= 100°C

T_J

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

°C

T_STG

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

Typ.

–––

0.50

0.24

Max.

Units

Thermal Resistance Junction-to-Case-(each IGBT) TO-220

Thermal Resistance Junction-to-Case-(each Diode) TO-220

Thermal Resistance Junction-to-Case-(each IGBT) TO-247

Thermal Resistance Junction-to-Case-(each Diode) TO-247

Thermal Resistance, Case-to-Sink (flat, greased surface)-TO-220

Thermal Resistance, Case-to-Sink (flat, greased surface)-TO-247

Thermal Resistance, Junction-to-Ambient (typical socket mount)-TO-220

Thermal Resistance, Junction-to-Ambient (typical socket mount)- TO-247

–––

0.60

1.53

0.65

1.62

–––

R_θJC(IGBT)

R_θJC(Diode)

R_θJC(IGBT)

R_θJC(Diode)

R_θCS

°C/W

R_θCS

R_θJA

–––

R_θJA

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/10/11

12 3 4 5 6 7...16

中文翻译

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与AUIRGB4062D相关器件

型号	品牌	获取价格	描述	数据表
AUIRGB4062D1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel
AUIRGC4063B	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel,
AUIRGDC025	INFINEON	获取价格	IGBT Planar
AUIRGDC0250	INFINEON	获取价格	汽车低 VCEon 分立 IGBT，采用Super TO-220 封装
AUIRGF66524D0	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
AUIRGP35B60PD	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMP
AUIRGP35B60PD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMP
AUIRGP4062D	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGP4062D1-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel
AUIRGP4063D	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMP

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