是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.13 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 39 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高工作温度: | 175 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 107 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AUIRFZ46NSTRR | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
AUIRFZ48N | INFINEON |
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汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO | |
AUIRFZ48Z | INFINEON |
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AUTOMOTIVE GRADE | |
AUIRFZ48ZS | INFINEON |
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AUTOMOTIVE GRADE | |
AUIRFZ48ZSTRL | INFINEON |
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Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met | |
AUIRFZ48ZSTRR | INFINEON |
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Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met | |
AUIRG4BC30S-S | INFINEON |
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Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
AUIRG4BC30S-SL | INFINEON |
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Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP | |
AUIRG4BC30SSTRL | INFINEON |
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Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
AUIRG4BC30SSTRR | INFINEON |
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Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP |