Datasheet > AUIRG4BC30SSTRL

AUIRG4BC30SSTRL

更新时间： 2024-09-10 03:08:31

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	301K
描述
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRG4BC30SSTRL 数据手册

AUTOMOTIVE GRADE

PD - 96340

AUIRG4BC30S-S

AUIRG4BC30S-SL

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

V_CES= 600V

Features

• Standard: optimized for minimum saturation

voltage and low operating frequencies (< 1kHz)

• Lead-Free, RoHS Compliant

V_{CE(on) typ.}= 1.4V

@V_GE= 15V, I_C= 18A

• Automotive Qualified *

n-channel

Benefits

• Typical Applications: PTC Heater,

Discharge Switch & Relay Replacements

D²Pak

TO-262

AUIRG4BC30S-S

AUIRG4BC30S-SL

Gate

Collector

Emitter

AbsoluteMaximumRatings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified

Parameter

Max.

Units

V_CES

Collector-to-EmitterBreakdownVoltage

ContinuousCollectorCurrent

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-EmitterVoltage

±20

V_GE

E_ARV

Reverse Voltage Avalanche Energy

MaximumPowerDissipation

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C MaximumPowerDissipation

T_J

OperatingJunctionand

-55 to +150

T_STG

StorageTemperatureRange

SolderingTemperature,for10seconds

°C

300 (0.063 in. (1.6mm) from case )

ThermalResistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.50

–––

1.44

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.

www.irf.com

12/03/10

12 3 4 5 6 7...13

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与AUIRG4BC30SSTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRG4BC30SSTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30U-S	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30U-SL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRG4BC30USTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30USTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4PC40S-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor
AUIRG4PH50S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
AUIRG7CH80K6B-M	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRGB4062D	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMP
AUIRGB4062D1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel

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