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AUIRG4BC30S-SL PDF预览

AUIRG4BC30S-SL

更新时间： 2024-09-09 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 栅功率控制晶体管
页数 文件大小 规格书
13页 301K
描述
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

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AUIRG4BC30S-SL 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, TO-262, 3 PINReach Compliance Code：compliant
风险等级：5.11外壳连接：COLLECTOR
最大集电极电流 (IC)：34 A集电极-发射极最大电压：600 V
配置：SINGLE最大降落时间（tf）：590 ns
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W子类别：Insulated Gate BIP Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：1550 ns标称接通时间 (ton)：40 ns
Base Number Matches：1

AUIRG4BC30S-SL 数据手册

 浏览型号AUIRG4BC30S-SL的Datasheet PDF文件第2页浏览型号AUIRG4BC30S-SL的Datasheet PDF文件第3页浏览型号AUIRG4BC30S-SL的Datasheet PDF文件第4页浏览型号AUIRG4BC30S-SL的Datasheet PDF文件第5页浏览型号AUIRG4BC30S-SL的Datasheet PDF文件第6页浏览型号AUIRG4BC30S-SL的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
PD - 96340  
AUIRG4BC30S-S  
AUIRG4BC30S-SL  
Standard Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
VCES = 600V  
Features  
• Standard: optimized for minimum saturation  
voltage and low operating frequencies (< 1kHz)  
• Lead-Free, RoHS Compliant  
VCE(on) typ. = 1.4V  
G
E
@VGE = 15V, IC = 18A  
• Automotive Qualified *  
n-channel  
Benefits  
• Typical Applications: PTC Heater,  
Discharge Switch & Relay Replacements  
D2Pak  
TO-262  
AUIRG4BC30S-S  
AUIRG4BC30S-SL  
G
C
E
Gate  
Collector  
Emitter  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified  
Parameter  
Max.  
Units  
VCES  
Collector-to-EmitterBreakdownVoltage  
ContinuousCollectorCurrent  
ContinuousCollectorCurrent  
Pulsed Collector Current   
600  
V
IC @ TC = 25°C  
34  
IC @ TC = 100°C  
18  
A
ICM  
68  
ILM  
Clamped Inductive Load Current‚  
Gate-to-EmitterVoltage  
68  
±20  
VGE  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
MaximumPowerDissipation  
10  
mJ  
PD @ TC = 25°C  
100  
W
PD @ TC = 100°C MaximumPowerDissipation  
42  
TJ  
OperatingJunctionand  
-55 to +150  
TSTG  
StorageTemperatureRange  
SolderingTemperature,for10seconds  
°C  
300 (0.063 in. (1.6mm) from case )  
ThermalResistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.2  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.50  
–––  
–––  
40  
1.44  
–––  
g (oz)  
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques  
refer to application note #AN-994.  
www.irf.com  
1
12/03/10  
1234567...13

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