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AUIRGDC025

更新时间： 2024-09-11 11:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
10页 432K
描述
IGBT Planar

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中文翻译

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AUIRGDC025 数据手册

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AUTOMOTIVE GRADE  
AUIRGDC0250  
Features  
C
Low VCE (on) Planar IGBT Technology  
VCES = 1200V  
Low Switching Losses  
Square RBSOA  
IC = 81A @ TC = 100°C  
G
100% of the Parts Tested for ILM  
Positive VCE (on) Temperature Coefficient  
Reflow Capable per JDSD22-A113  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VCE(on) typ. = 1.47V @ 33A  
E
n-channel  
Benefits  
Device optimized for soft switching applications  
High Efficiency due to Low VCE(on), low switching losses  
Rugged transient performance for increased reliability  
Excellent current sharing in parallel operation  
Low EMI  
Super-TO-220  
AUIRGDC0250  
G
Gate  
C
E
Application  
PTC Heater  
Collector  
Emitter  
Relay Replacement  
Standard Pack  
Form Quantity  
Tube 50  
Base Part Number  
Package Type  
Orderable Part Number  
AUIRGDC0250  
Super-TO-220  
AUIRGDC0250  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Collector-to-Emitter Voltage  
IC @ TC = 25°C Continuous Collector Current  
IC @ TC = 100°C Continuous Collector Current  
Max.  
1200  
141  
81  
Units  
V
VCES  
A
ICM  
ILM  
VGE  
Pulse Collector Current, VGE = 15V   
Clamped Inductive Load Current, VGE = 20V   
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
99  
99  
±20  
±30  
V
PD @ TC = 25°C Maximum Power Dissipation  
PD @ TC = 100°C Maximum Power Dissipation  
543  
217  
W
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Typ.  
Max. Units  
Thermal Resistance Junction-to-Case (each IGBT)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
–––  
0.23  
–––  
62  
RJC (IGBT)  
RCS  
RJA  
0.50  
–––  
°C/W  
* Qualification standards can be found at www.infineon.com  
V 2.6  
2019-04-18  
1
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