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AUIRG7CH80K6B-M PDF预览

AUIRG7CH80K6B-M

更新时间： 2024-09-10 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管栅
页数 文件大小 规格书
3页 91K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRG7CH80K6B-M 技术参数

生命周期：Active包装说明：12 X 12 MM, DIE-3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.26Is Samacsys：N
最大集电极电流 (IC)：200 A集电极-发射极最大电压：1200 V
配置：SINGLE门极发射器阈值电压最大值：7.5 V
门极-发射极最大电压：30 VJESD-30 代码：S-XUUC-N3
元件数量：1端子数量：3
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：UNCASED CHIP
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：1220 ns标称接通时间 (ton)：330 ns
Base Number Matches：1

AUIRG7CH80K6B-M 数据手册

 浏览型号AUIRG7CH80K6B-M的Datasheet PDF文件第2页浏览型号AUIRG7CH80K6B-M的Datasheet PDF文件第3页 
AUTOMOTIVE GRADE  
PD - 96279  
AUIRG7CH80K6B-M  
•
100% Tested at Probe *  
Features  
C
•
Designed for Automotive Application**  
•
•
•
•
•
•
•
•
Solderable Front Metal  
Low VCE (on) Trench IGBT Technology  
Low Switching Losses  
Maximum Junction Temperature 175 °C  
Short Circuit Rated  
Square RBSOA  
G
E
n-channel  
Positive VCE (on) Temperature Coefficient  
Tight Parameter Distribution  
Applications  
Benefits  
•
•
Medium/High Power Inverters  
HEV/EV Inverter  
•
High Efficiency in a Wide Range of Applications  
Suitable for a Wide Range of Switching Frequencies  
due to Low VCE (on) and Low Switching Losses  
Rugged Transient Performance for Increased  
Reliability  
•
•
•
•
•
Excellent Current Sharing in Parallel Operation  
EnablesDoublesidecoolingandhighercurrentdensity  
Eliminates wire bonds and Improves Reliability  
Chip Type  
VCE  
ICn  
Die Size  
Package  
AUIRG7CH80K6B  
1200V  
200A  
12 X 12 mm2  
Wafer  
Mechanical Parameter  
Die Size  
12.075x12.075  
Emiter Pad Size (Included Gate Pad)  
Gate Pad Size  
See Die Drawing  
Round, 1mm diameter  
mm2  
Area Total / Active  
Thickness  
144/114  
140  
150  
µm  
mm  
Wafer Size  
Flat Position  
0
Degrees  
Maximum-Possible Chips per Wafer  
Passivation Frontside  
Front Metal  
Backside Metal  
Die Bond  
89 pcs  
Silicon Nitride  
Al (4µm), Ti (0.1µm), Ni (0.2µm), Ag (0.6µm)  
Al (0.1µm), Ti (0.1µm), Ni (0.4µm), Ag (0.6µm)  
Electrically conductive epoxy or solder  
0.51mm min (black, center)  
Store in original container, in dry Nitrogen,  
<6 months at an ambient temperature of 23°C  
Reject Ink Dot Size  
Recommended Storage Environment  
Note:  
*
This IR product is 100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to  
restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional  
performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and assumed conditions,  
and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed package and use  
conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established  
processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95%  
or greater for individual die; however, customer’s results will vary. Estimates such as those described and set forth in this data sheet for  
semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an  
equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable standard  
terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available  
upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can  
bepurchased as known good die.  
**Technology qualified in sup-TO247 package according to AEC-Q101.  
www.irf.com  
1
01/12/10  
123

中文翻译

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