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AUIRFZ44ZSTRR

更新时间： 2024-09-09 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 329K
描述
HEXFET? Power MOSFET

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中文翻译

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AUIRFZ44ZSTRR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.27
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：105 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：51 A
最大漏极电流 (ID)：51 A最大漏源导通电阻：0.0139 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：80 W最大脉冲漏极电流 (IDM)：200 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON

AUIRFZ44ZSTRR 数据手册

 浏览型号AUIRFZ44ZSTRR的Datasheet PDF文件第2页浏览型号AUIRFZ44ZSTRR的Datasheet PDF文件第3页浏览型号AUIRFZ44ZSTRR的Datasheet PDF文件第4页浏览型号AUIRFZ44ZSTRR的Datasheet PDF文件第5页浏览型号AUIRFZ44ZSTRR的Datasheet PDF文件第6页浏览型号AUIRFZ44ZSTRR的Datasheet PDF文件第7页 
PD - 97543  
AUIRFZ44Z  
AUIRFZ44ZS  
HEXFET® Power MOSFET  
AUTOMOTIVE GRADE  
Features  
●
●
●
●
●
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
D
V(BR)DSS  
55V  
13.9m  
51A  
RDS(on) max.  
ID  
Ω
G
●
●
Lead-Free, RoHS Compliant  
Automotive Qualified *  
S
D
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating . These features combine to make  
this design an extremely efficient and reliable device for use  
in Automotive applications and a wide variety of other appli-  
cations.  
S
D
S
D
G
G
D2Pak  
AUIRFZ44ZS  
TO-220AB  
AUIRFZ44Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.  
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power  
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Pulsed Drain Current  
Max.  
51  
Units  
A
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
36  
200  
80  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.53  
± 20  
W/°C  
V
V
GS  
Gate-to-Source Voltage  
EAS  
86  
105  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
°C  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Typ.  
–––  
Max.  
1.87  
–––  
62  
Units  
°C/W  
Parameter  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  
1234567...14

中文翻译

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