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AUIRGB4062D1

更新时间： 2024-09-10 20:50:43
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
15页 416K
描述
Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel

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中文翻译

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AUIRGB4062D1 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.86
Is Samacsys：N最大集电极电流 (IC)：59 A
集电极-发射极最大电压：600 V最大降落时间（tf）：40 ns
门极发射器阈值电压最大值：6.5 V门极-发射极最大电压：20 V
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：246 W
最大上升时间（tr）：41 ns子类别：Insulated Gate BIP Transistors
表面贴装：NO处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRGB4062D1 数据手册

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AUIRGB4062D1  
AUIRGS4062D1  
AUIRGSL4062D1  
AUTOMOTIVE GRADE  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
VCES = 600V  
Features  
IC(Nominal) = 24A  
•
•
•
•
•
•
•
•
•
•
Low VCE (on) Trench IGBT Technology  
Low Switching Losses  
5μs SCSOA  
SquareRBSOA  
100% of The Parts Tested for ILM  
Positive VCE (on) Temperature Coefficient.  
Ultra Fast Soft Recovery Co-pak Diode  
Tighter Distribution of Parameters  
Lead-Free,RoHSCompliant  
G
tSC ≥ 5μs, TJ(max) = 175°C  

E
VCE(on) typ. = 1.57V  
n-channel  
Automotive Qualified *  
C
C
C
Benefits  
•
•
High Efficiency in a Wide Range of Applications  
Suitable for a Wide Range of Switching Frequencies due  
to Low VCE (ON) and Low Switching Losses  
RuggedTransientPerformanceforIncreasedReliability  
ExcellentCurrentSharinginParallelOperation  
Low EMI  
E
E
E
C
C
•
•
•
G
G
G
D2Pak  
AUIRGS4062D1  
TO-262  
AUIRGSL4062D1  
TO-220AB  
AUIRGB4062D1  
Applications  
•
AirConditioningCompressor  
G
C
E
Gate  
Collector  
Emitter  
OrderingInformation  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
50  
AUIRGB4062D1  
AUIRGSL4062D1  
AUIRGS4062D1  
TO-220  
TO-262  
D2Pak  
Tube  
Tube  
Tube  
AUIRGB4062D1  
AUIRGSL4062D1  
AUIRGS4062D1  
50  
50  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRGS4062D1TRL  
AUIRGS4062D1TRR  
AbsoluteMaximumRatings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Thesearestressratingsonly;andfunctional  
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated  
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and  
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Nominal Current  
600  
V
IC @ TC = 25°C  
59  
39  
IC @ TC = 100°C  
INOMINAL  
24  
Pulse Collector Current, VGE = 15V  
ICM  
72  
Clamped Inductive Load Current, VGE = 20V  
Diode Continous Forward Current  
ILM  
96  
A
IF @ TC = 25°C  
59  
IF @ TC = 100°C  
Diode Continous Forward Current  
Diode Maximum Forward Current  
39  
IFM  
96  
VGE  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
±20  
±30  
246  
123  
V
PD @ TC = 25°C  
W
PD @ TC = 100°C  
TJ  
-55 to +175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 sec. (1.6mm from case)  
Mounting Torque, 6-32 or M3 Screw  
300  
10 lbf·in (1.1N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.50  
62  
Max.  
0.61  
1.2  
Units  
Thermal Resistance Junction-to-Case (IGBT)  
Rθ (IGBT)  
JC  
Thermal Resistance Junction-to-Case (Diode)  
Rθ (Diode)  
JC  
°C/W  
Rθ  
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient  
–––  
–––  
CS  
Rθ  
JA  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
May 02, 2013  
1234567...15

中文翻译

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