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AUIRG4PH50S

更新时间： 2024-09-10 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管双极性晶体管栅局域网
页数 文件大小 规格书
11页 232K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

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AUIRG4PH50S 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：7.75Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：57 A
集电极-发射极最大电压：1200 V配置：SINGLE
最大降落时间（tf）：638 ns门极发射器阈值电压最大值：6 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：200 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称断开时间 (toff)：2170 ns
标称接通时间 (ton)：62 nsBase Number Matches：1

AUIRG4PH50S 数据手册

 浏览型号AUIRG4PH50S的Datasheet PDF文件第2页浏览型号AUIRG4PH50S的Datasheet PDF文件第3页浏览型号AUIRG4PH50S的Datasheet PDF文件第4页浏览型号AUIRG4PH50S的Datasheet PDF文件第5页浏览型号AUIRG4PH50S的Datasheet PDF文件第6页浏览型号AUIRG4PH50S的Datasheet PDF文件第7页 
PD -96301  
AUTOMOTIVE GRADE  
AUIRG4PH50S  
Standard Speed IGBT  
C
INSULATED GATE BIPOLAR TRANSISTOR  
VCES =1200V  
Features  
V
CE(on) typ. = 1.47V  
G
• Standard: Optimized for minimum saturation  
voltage and low operating frequencies (< 1kHz)  
• Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency  
• Industry standard TO-247AC package  
• Lead-Free  
E
@VGE = 15V, IC = 33A  
n-channel  
C
• Automotive Qualified *  
E
C
G
Benefits  
• Generation 4 IGBT's offer highest efficiency available  
• IGBT's optimized for specified application conditions  
TO-247AC  
G
C
E
Gate  
Collector  
Emitter  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
Units  
V
Max.  
1200  
57  
VCES  
IC@ TC = 25°C  
33  
IC@ TC = 100°C  
A
114  
114  
± 20  
± 30  
270  
200  
80  
ICM  
ILM  
Clamped Inductive Load Current  
Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Reverse Voltage Avalanche Energy  
VGE  
V
mJ  
W
EARV  
PD @ TC =25°  
PD @ TC =100°  
TJ  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
-55 to + 150  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Mounting Torque, 6-32 or M3 Screw.  
Thermal Resistance  
Parameter  
Min.  
—
Typ.  
—
Max.  
0.64  
—
Units  
°C/W  
g (oz)  
Rθ  
Junction-to-Case  
JC  
RθCS  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.24  
—
—
—
40  
6.0(0.21)  
—
—
www.irf.com  
1
04/13/10  
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中文翻译

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