是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | ROHS COMPLIANT, PLASTIC, D2PAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.58 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 34 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 590 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 100 W | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1550 ns |
标称接通时间 (ton): | 40 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AUIRG4BC30U-S | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
AUIRG4BC30U-SL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP | |
AUIRG4BC30USTRL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
AUIRG4BC30USTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
AUIRG4PC40S-E | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
AUIRG4PH50S | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
AUIRG7CH80K6B-M | INFINEON |
获取价格 |
AUTOMOTIVE GRADE | |
AUIRGB4062D | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMP | |
AUIRGB4062D1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel | |
AUIRGC4063B | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, |