Datasheet > AUIRGP65G40D

AUIRGP65G40D

更新时间： 2024-09-15 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
15页	575K
描述
IGBT Planar

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中文翻译

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数据手册

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AUIRGP65G40D 数据手册

AUIRGP65G40D0

AUIRGF65G40D0

ULTRAFAST IGBT WITH

AUTOMOTIVE GRADE

™

CooliRIGBT

ULTRAFAST SOFT RECOVERY DIODE

Features

•

Designed And Qualified for Automotive Applications

V_CES= 600V

•

Ultra Fast Switching IGBT:70-200kHz

Extremely Low Switching Losses

Maximum Junction Temperature 175 °C

Square RBSOA

_CE(on)typ. = 1.8V

I_C@T_C=100°C = 41A

T_Jmax = 175°C

Positive V_{CE (on)}Temperature Coefficient

n-channel

Benefits

•

Optimized High Frequency Switching Applications

RuggedTransientPerformanceforIncreased

Reliability

•

Excellent Current Sharing in Parallel Operation

TO-247AD

AUIRGF65G40D0

TO-247AC

AUIRGP65G40D0

Applications

•

DC-DCConverter

PFC

•

G a te

C o lle c to r

E m itte r

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

AUIRGP65G40D0

AUIRGF65G40D0

TO-247AC

TO-247AD

Tube

AUIRGP65G40D0

AUIRGF65G40D0

AbsoluteMaximumRatings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

I_C@ T_C= 25°C

Continuous Collector Current

Nominal Current @ 200kHz

I_C@ T_C= 100°C

I_NOMINAL

I_CM

Pulse Collector Current

I_LM

Clamped Inductive Load Current

112

46.1

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FRM

Diode Continous Forward Current

Maximum Repetitive Forward Current

112

±20

625

313

V_GE

Gate-to-Emitter Voltage

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

Maximum Power Dissipation

Operating Junction and

-55 to +175

T_STG

°C

Storage Temperature Range

Soldering Temperature for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Junction-to-Case-(each IGBT)

Junction-to-Case-(each Diode)

Min.

–––

Typ.

–––

Max.

0.24

1.78

–––

Units

R_θJC(IGBT)

R_θJC(Diode)

R_θCS

–––

°C/W

Case-to-Sink (flat, greased surface)

0.24

R_θJA

Junction-to-Ambient (typical socket mount)

–––

6.0 (0.21)

–––

g (oz)

*Qualification standards can be found at http://www.irf.com/

www.irf.com

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September 8, 2015

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中文翻译

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与AUIRGP65G40D相关器件

型号	品牌	获取价格	描述	数据表
AUIRGP65G40D0	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
AUIRGP66524D	INFINEON	获取价格	IGBT Trench
AUIRGP66524D0	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
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AUIRGPS4070D	INFINEON	获取价格	IGBT Trench
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AUIRGR4045D	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRL	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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