Datasheet > AUIRGPS4067D1

AUIRGPS4067D1

更新时间： 2024-09-14 19:57:31

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	300K
描述
Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, TO-274AA, ROHS COMPLIANT, PLASTIC, SUPER-247, 3 PIN

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AUIRGPS4067D1 数据手册

PD-97726C

AUTOMOTIVEGRADE

AUIRGPS4067D1

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

Features

I_C= 160A, T_C= 100°C

 Low V_{CE (on)}Trench IGBT Technology

 Low Switching Losses

 6μs SCSOA

 SquareRBSOA

 100% of the parts tested for I_LM

 Positive V_{CE (on)}Temperature Coefficient

 Soft Recovery Co-pak Diode

 Lead-Free,RoHSCompliant

 Automotive Qualified *

t_SC6μs, T_J(max)= 175°C

V_CE(on)typ. = 1.70V

n-channel

Benefits

 High Efficiency in a Wide Range of Applications

 Suitable for Applications in the Low to Mid-Rrange

Frequencies

Super-247

 RuggedTransientPerformanceforIncreasedReliability

 Excellent Current Sharing in Parallel Operation

 Low EMI

AUIRGPS4067D1

Gate

Collector

Emitter

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;

and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are

measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Collector-to-Emitter Voltage

Max.

Units

V_CES

600

240

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_NOMINAL

Continuous Collector Current

Nominal Current

160

120

I_CM

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V

Diode Nominal Current

360

I_LM

480

I_{F NOMINAL}

I_FM

120

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

480

V_GE

±20

±30

P_D@ T_C= 25°C

750

P_D@ T_C= 100°C

Maximum Power Dissipation

375

T_J

Operating Junction and

-55 to +175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.20

0.44

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_(IGBT)

R_(Diode)

°C/W

R_

–––

*Qualification standards can be found at http://www.irf.com/

www.irf.com

09/27/2012

12 3 4 5 6 7...13

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与AUIRGPS4067D1相关器件

型号	品牌	获取价格	描述	数据表
AUIRGPS4070D	INFINEON	获取价格	IGBT Trench
AUIRGPS4070D0	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, TO-247AA,
AUIRGR4045D	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRL	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGS30B60K	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS30B60KTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS30B60KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS4062D1	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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