AUIRGP66524D0
AUIRGF66524D0
AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
™
COOLiRIGBT
C
VCES = 600V
NOMINAL = 24A
I
E
E
C
Tsc 6µs, TJ(MAX) = 175°C
CE(ON) typ. = 1.60V
G
C
G
G
E
V
TO-247AC
TO-247AD
n-channel
AUIRGP66524D0
AUIRGF66524D0
Applications
Air Conditioning Compressor
Auxiliary Motor Drive
G
Gate
C
E
Collector
Emitter
Features
Low VCE(on) Trench IGBT Technology
Benefits
High Efficiency in a Wide Range of Applications
Low Switching Losses
6µs SCSOA Guaranteed
Square RBSOA and 100% Clamp IL Tested
Suitable for a Wide Range of Switching Frequencies
Enables Short Circuit Protection Scheme
Rugged Hard Switching Operation
Positive VCE(on) Temperature Coefficient
Ultra Fast Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant, Automotive Qualified *
Enables Easy Paralleling of Devices
Better Efficiency and Improved EMI Performance
Environmentally Friendly
Base Part Number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
AUIRGP66524D0
AUIRGF66524D0
TO-247AC
TO-247AD
Tube
Tube
25
25
AUIRGP66524D0
AUIRGF66524D0
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Collector-to-Emitter Voltage
Nominal Collector Current
Max.
600
24
Units
V
VCES
INominal
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Voltage Transient
60
40
72
96
55
35
72
±20
±30
15
A
V
dV/dt
V/ns
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
TJ
Maximum Power Dissipation
214
107
-55 to +175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
* Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2014 International Rectifier
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October 10, 2014