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AUIRGP66524D PDF预览

AUIRGP66524D

更新时间: 2024-09-15 11:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
13页 968K
描述
IGBT Trench

AUIRGP66524D 数据手册

 浏览型号AUIRGP66524D的Datasheet PDF文件第2页浏览型号AUIRGP66524D的Datasheet PDF文件第3页浏览型号AUIRGP66524D的Datasheet PDF文件第4页浏览型号AUIRGP66524D的Datasheet PDF文件第5页浏览型号AUIRGP66524D的Datasheet PDF文件第6页浏览型号AUIRGP66524D的Datasheet PDF文件第7页 
AUIRGP66524D0  
AUIRGF66524D0  
AUTOMOTIVE GRADE  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
COOLiRIGBT  
VCES = 600V  
NOMINAL = 24A  
I
E
E
C
Tsc 6µs, TJ(MAX) = 175°C  
CE(ON) typ. = 1.60V  
C
G
G
V
TO-247AC  
TO-247AD  
AUIRGP66524D0  
AUIRGF66524D0  
Applications  
Air Conditioning Compressor  
Auxiliary Motor Drive  
G
Gate  
C
E
Collector  
Emitter  
Features  
Low VCE(on) Trench IGBT Technology  
Benefits  
High Efficiency in a Wide Range of Applications  
Low Switching Losses  
6µs SCSOA Guaranteed  
Square RBSOA and 100% Clamp IL Tested  
Suitable for a Wide Range of Switching Frequencies  
Enables Short Circuit Protection Scheme  
Rugged Hard Switching Operation  
Positive VCE(on) Temperature Coefficient  
Ultra Fast Soft Recovery Co-pak Diode  
Lead-Free, RoHS Compliant, Automotive Qualified *  
Enables Easy Paralleling of Devices  
Better Efficiency and Improved EMI Performance  
Environmentally Friendly  
Base Part Number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
AUIRGP66524D0  
AUIRGF66524D0  
TO-247AC  
TO-247AD  
Tube  
Tube  
25  
25  
AUIRGP66524D0  
AUIRGF66524D0  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-  
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Collector-to-Emitter Voltage  
Nominal Collector Current  
Max.  
600  
24  
Units  
V
VCES  
INominal  
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
ILM  
IF @ TC = 25°C  
IF @ TC = 100°C  
IFM  
VGE  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continous Forward Current  
Diode Continous Forward Current  
Diode Maximum Forward Current   
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Voltage Transient  
60  
40  
72  
96  
55  
35  
72  
±20  
±30  
15  
A
V
dV/dt  
V/ns  
W
PD @ TC = 25°C  
PD @ TC = 100°C Maximum Power Dissipation  
TJ  
Maximum Power Dissipation  
214  
107  
-55 to +175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
* Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
October 10, 2014  

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