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AUIRGP35B60PD-E

更新时间： 2024-09-14 15:44:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅功率控制晶体管
页数 文件大小 规格书
13页 400K
描述
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRGP35B60PD-E 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.64
其他特性：HIGH RELIABILITY外壳连接：COLLECTOR
最大集电极电流 (IC)：60 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE最大降落时间（tf）：16 ns
门极发射器阈值电压最大值：5 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-247ADJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：308 W认证状态：Not Qualified
最大上升时间（tr）：11 ns子类别：Insulated Gate BIP Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：142 ns标称接通时间 (ton)：34 ns
Base Number Matches：1

AUIRGP35B60PD-E 数据手册

 浏览型号AUIRGP35B60PD-E的Datasheet PDF文件第2页浏览型号AUIRGP35B60PD-E的Datasheet PDF文件第3页浏览型号AUIRGP35B60PD-E的Datasheet PDF文件第4页浏览型号AUIRGP35B60PD-E的Datasheet PDF文件第5页浏览型号AUIRGP35B60PD-E的Datasheet PDF文件第6页浏览型号AUIRGP35B60PD-E的Datasheet PDF文件第7页 
PD - 97619  
AUTOMOTIVEGRADE  
AUIRGP35B60PD-E  
WARP2 SERIES IGBT WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
C
VCES = 600V  
VCE(on) typ. = 1.85V  
@ VGE = 15V IC = 22A  
• NPT Technology, Positive Temperature Coefficient  
• Lower VCE(SAT)  
• Lower Parasitic Capacitances  
• Minimal Tail Current  
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  
• Tighter Distribution of Parameters  
• HigherReliability  
• Lead-Free,RoHSCompliant  
• AutomotiveQualified*  
Equivalent MOSFET  
Parameters  
G
RCE(on) typ. = 84mΩ  
ID (FET equivalent) = 35A  
E
n-channel  
C
Applications  
• PFC and ZVS SMPS Circuits  
• DC/DCConverterCharger  
E
C
G
Benefits  
TO-247AD  
AUIRGP35B60PD-E  
• Parallel Operation for Higher Current Applications  
• Lower Conduction Losses and Switching Losses  
• Higher Switching Frequency up to 150KHz  
G
C
E
Gate  
Collector  
Emitter  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
IC @ TC = 25°C  
60  
IC @ TC = 100°C  
34  
ICM  
Pulse Collector Current (Ref. Fig. C.T.4)  
Clamped Inductive Load Current  
Diode Continous Forward Current  
Diode Continous Forward Current  
Maximum Repetitive Forward Current  
Gate-to-Emitter Voltage  
120  
ILM  
120  
A
IF @ TC = 25°C  
IF @ TC = 100°C  
IFRM  
40  
15  
60  
VGE  
±20  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
Maximum Power Dissipation  
308  
W
Maximum Power Dissipation  
123  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.41  
1.7  
Units  
°C/W  
RθJC (IGBT)  
RθJC (Diode)  
RθCS  
Thermal Resistance Junction-to-Case-(each IGBT)  
Thermal Resistance Junction-to-Case-(each Diode)  
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
Weight  
–––  
0.50  
–––  
40  
RθJA  
–––  
6.0 (0.21)  
–––  
g (oz)  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
01/11/10  
1234567...13

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