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AUIRGP4066D1-E PDF预览

AUIRGP4066D1-E

更新时间： 2024-09-14 19:28:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅功率控制晶体管
页数 文件大小 规格书
13页 371K
描述
Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRGP4066D1-E 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.62
外壳连接：COLLECTOR最大集电极电流 (IC)：140 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：80 ns门极发射器阈值电压最大值：6.5 V
门极-发射极最大电压：20 VJEDEC-95代码：TO-247AD
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：454 W最大上升时间（tr）：100 ns
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：320 ns标称接通时间 (ton)：115 ns
Base Number Matches：1

AUIRGP4066D1-E 数据手册

 浏览型号AUIRGP4066D1-E的Datasheet PDF文件第2页浏览型号AUIRGP4066D1-E的Datasheet PDF文件第3页浏览型号AUIRGP4066D1-E的Datasheet PDF文件第4页浏览型号AUIRGP4066D1-E的Datasheet PDF文件第5页浏览型号AUIRGP4066D1-E的Datasheet PDF文件第6页浏览型号AUIRGP4066D1-E的Datasheet PDF文件第7页 
AUIRGP4066D1  
AUTOMOTIVE GRADE  
AUIRGP4066D1-E  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
VCES = 600V  
Features  
IC(Nominal) = 75A  
•
•
•
•
•
•
•
•
•
Low VCE (ON) Trench IGBT Technology  
Low switching losses  
G
tSC ≥ 5μs, TJ(max) = 175°C  
Maximum Junction temperature 175 °C  
5 μS short circuit SOA  
E
V
CE(on) typ. = 1.70V  
SquareRBSOA  
n-channel  
100% of the parts tested for 4X rated current (ILM)  
Positive VCE (ON) Temperature Coefficient  
Soft Recovery Co-Pak Diode  
C
C
Tightparameterdistribution  
•
•
Lead-Free, RoHSCompliant  
Automotive Qualified *  
E
C
G
E
Benefits  
C
G
• High Efficiency in a wide range of applications  
• Suitable for a wide range of switching frequencies due to  
Low VCE (ON) and Low Switching losses  
TO-247AC  
AUIRGP4066D1  
TO-247AD  
AUIRGP4066D1-E  
• RuggedtransientPerformanceforincreasedreliability  
• ExcellentCurrentsharinginparalleloperation  
G
Gate  
C
E
Collector  
Emitter  
• Low EMI  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Complete Part Number  
Form  
Quantity  
AUIRGP4066D1  
TO-247AC  
TO-247AD  
Tube  
25  
AUIRGP4066D1  
AUIRGP4066D1-E  
Tube  
25  
AUIRGP4066D1-E  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Thesearestressratingsonly;andfunctional  
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated  
conditionsforextendedperiodsmayaffectdevicereliability. Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmounted and  
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Nominal Current  
140  
IC @ TC = 25°C  
IC @ TC = 100°C  
90  
75  
INOMINAL  
ICM  
Pulse Collector Current VGE = 15V  
Clamped Inductive Load Current VGE = 20V  
Diode Nominal Current  
225  
ILM  
300  
75  
A
IF NOMINAL  
IFM  
Diode Maximum Forward Current  
300  
±20  
VGE  
Continuous Gate-to-Emitter Voltage  
V
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
±30  
454  
PD @ TC = 25°C  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
Operating Junction and  
227  
TJ  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.33  
0.53  
–––  
Units  
Thermal Resistance Junction-to-Case-(each IGBT)  
RθJC (IGBT)  
RθJC (Diode)  
RθCS  
°C/W  
Thermal Resistance Junction-to-Case-(each Diode)  
–––  
Thermal Resistance, Case-to-Sink (flat, greased surface)  
0.24  
RθJA  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
–––  
40  
–––  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
May 02, 2013  
1234567...13

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