Datasheet > AUIRG4PC40S-E

AUIRG4PC40S-E

更新时间： 2024-09-10 14:47:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
10页	398K
描述
Insulated Gate Bipolar Transistor

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中文翻译

获取价格

数据手册

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AUIRG4PC40S-E 数据手册

AUTOMOTIVE GRADE

AUIRG4PC40S-E

Insulated Gate Bipolar Transistor

V_CES= 600V

Features

_CE(ON)typ. = 1.32V

 Standard: Optimized for minimum saturation voltage

and low operating frequencies ( < 1kHz)

 Generation 4 IGBT design provides tighter parameter

distribution and higher efficiency than Generation 3

 Industry standard TO-247AD package

 Lead-Free

@ V_GE= 15V, IC = 31A

n-channel

 Automotive Qualified*

Benefits

 Generation 4 IGBT's offer highest efficiency available

 IGBT's optimized for specified application conditions

 Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

AUIRG4PC40S‐E

TO‐247AD

Gate

Collector

Emitter

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tube

Quantity

AUIRG4PC40S-E

TO-247AD

AUIRG4PC40S-E

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Collector-to-Emitter Voltage

600

Continuous Collector Current

Pulse Collector Current 

120

I_LM

V_GE

Clamped Inductive Load Current 

Continuous Gate-to-Emitter Voltage

120

±20

E_ARV

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

Reverse Voltage Avalanche Energy 

Maximum Power Dissipation

Operating Junction and

160

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Thermal Resistance Junction-to-Case

Typ.

–––

Max.

0.77

Units

°C/W

g (oz)

R_JC

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

Weight

0.24

–––

R_CS

R_JA

6 (0.21)

–––

* Qualification standard can be found at http:// www.irf.com/

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March 31, 2014

12 3 4 5 6 7...10

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