Datasheet > AUIRGPS4070D

AUIRGPS4070D

更新时间： 2024-09-15 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
11页	833K
描述
IGBT Trench

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中文翻译

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数据手册

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AUIRGPS4070D 数据手册

AUTOMOTIVE GRADE

AUIRGPS4070D0

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

 Low V_{CE (on)}Trench IGBT Technology

 Low Switching Losses

 6µs SCSOA

 Square RBSOA

V_CES= 600V

I_C= 160A_,T_C= 100°C

tsc 6µs, T_J(MAX)= 175°C



 100% of the parts tested for I^LM

_{CE(on) typ}. = 1.70V

n-channel

 Positive V_{CE (on)}Temperature Coefficient

 Soft Recovery Co-pak Diode

 Lead-Free, RoHS Compliant

 Automotive Qualified *

Benefits

 High Efficiency in a Wide Range of Applications

 Suitable for Applications in the Low to Mid-Range Frequencies

 Rugged Transient Performance for Increased Reliability

 Excellent Current Sharing in Parallel Operation

 Low EMI

Super-247A

Gate

Collector

Emitter

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

AUIRGPS4070D0

Super-247

Tube

AUIRGPS4070D0

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rat-

ings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless

otherwise specified.

Parameter

Max.

600

240

160

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

Collector-to-Emitter Voltage

Continuous Collector Current

Nominal Current

I_NOMINAL

I_CM

I_LM

I_{F NOMINAL}

I_FM

V_GE

120

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V 

Diode Nominal Current 

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

360

480

120

480

±20

±30

750

375

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

T_STG

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

-55 to +175

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Typ.

Max. Units

Thermal Resistance Junction-to-Case (each IGBT) 

Thermal Resistance Junction-to-Case (each Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

0.20

R_JC(IGBT)

R_JC(Diode)

R_CS

–––

0.24

–––

0.45

°C/W

–––

R_JA

* Qualification standards can be found at www.infineon.com

2016-12-12

12 3 4 5 6 7...11

中文翻译

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与AUIRGPS4070D相关器件

型号	品牌	获取价格	描述	数据表
AUIRGPS4070D0	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, TO-247AA,
AUIRGR4045D	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRL	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGR4045DTRR	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGS30B60K	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS30B60KTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS30B60KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRGS4062D1	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGS4062D1TRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 59A I(C), 600V V(BR)CES, N-Channel

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