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AUIRGP4063D

更新时间： 2024-09-14 20:49:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅功率控制晶体管
页数 文件大小 规格书
13页 331K
描述
Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRGP4063D 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.49外壳连接：COLLECTOR
最大集电极电流 (IC)：96 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE最大降落时间（tf）：46 ns
门极发射器阈值电压最大值：6.5 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-247ACJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：330 W认证状态：Not Qualified
最大上升时间（tr）：56 ns子类别：Insulated Gate BIP Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：210 ns标称接通时间 (ton)：100 ns
Base Number Matches：1

AUIRGP4063D 数据手册

 浏览型号AUIRGP4063D的Datasheet PDF文件第2页浏览型号AUIRGP4063D的Datasheet PDF文件第3页浏览型号AUIRGP4063D的Datasheet PDF文件第4页浏览型号AUIRGP4063D的Datasheet PDF文件第5页浏览型号AUIRGP4063D的Datasheet PDF文件第6页浏览型号AUIRGP4063D的Datasheet PDF文件第7页 
AUIRGP4063D  
AUTOMOTIVE GRADE  
AUIRGP4063D-E  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
VCES = 600V  
Features  
• Low VCE (ON) Trench IGBT Technology  
IC = 60A, TC = 100°C  
• Low switching losses  
• Maximum Junction temperature 175 °C  
• 5 μS short circuit SOA  
• SquareRBSOA  
• 100% of the parts tested for 4X rated current (ILM  
• Positive VCE (ON) Temperature co-efficient  
• Ultra fast soft Recovery Co-Pak Diode  
• Tightparameterdistribution  
G
tSC 5μs, TJ(max) = 175°C  
E
VCE(on) typ. = 1.6V  
)
n-channel  
C
C
• LeadFreePackage  
Benefits  
• High Efficiency in a wide range of applications  
• Suitable for a wide range of switching frequencies due to  
Low VCE (ON) and Low Switching losses  
• RuggedtransientPerformanceforincreasedreliability  
• ExcellentCurrentsharinginparalleloperation  
• Low EMI  
E
E
C
C
G
G
TO-247AC  
AUIRGP4063D  
TO-247AD  
AUIRGP4063D-E  
G
C
E
Gate  
Collector  
Emitter  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
AUIRGP4063D  
AUIRGP4063D-E  
TO-247  
TO-247  
Tube  
Tube  
25  
25  
AUIRGP4063D  
AUIRGP4063D-E  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Collector-to-Emitter Voltage  
Max.  
600  
Units  
VCES  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
Continuous Collector Current  
100  
Continuous Collector Current  
60  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
144  
I
192  
A
LM  
IF @ TC = 25°C  
Diode Continous Forward Current  
Diode Continous Forward Current  
Diode Maximum Forward Current  
82  
IF @ TC = 100°C  
50  
IFM  
192  
VGE  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
±20  
V
±30  
PD @ TC = 25°C  
330  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
170  
TJ  
Operating Junction and  
-55 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
www.irf.com © 2013 International Rectifier  
July 12, 2013  
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