是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.09 |
其他特性: | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 105 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 51 A |
最大漏极电流 (ID): | 51 A | 最大漏源导通电阻: | 0.0139 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 80 W | 最大脉冲漏极电流 (IDM): | 200 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AUIRFZ44ZSTRR | INFINEON |
获取价格 |
HEXFET? Power MOSFET | |
AUIRFZ46NL | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | |
AUIRFZ46NS | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
AUIRFZ46NSTRL | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
AUIRFZ46NSTRR | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
AUIRFZ48N | INFINEON |
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汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO | |
AUIRFZ48Z | INFINEON |
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AUTOMOTIVE GRADE | |
AUIRFZ48ZS | INFINEON |
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AUTOMOTIVE GRADE | |
AUIRFZ48ZSTRL | INFINEON |
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Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met | |
AUIRFZ48ZSTRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met |