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AUIRFZ48Z PDF预览

AUIRFZ48Z

更新时间： 2024-09-09 12:53:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 258K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRFZ48Z 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.24其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：120 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：61 A最大漏极电流 (ID)：61 A
最大漏源导通电阻：0.011 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：91 W
最大脉冲漏极电流 (IDM)：240 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFZ48Z 数据手册

 浏览型号AUIRFZ48Z的Datasheet PDF文件第2页浏览型号AUIRFZ48Z的Datasheet PDF文件第3页浏览型号AUIRFZ48Z的Datasheet PDF文件第4页浏览型号AUIRFZ48Z的Datasheet PDF文件第5页浏览型号AUIRFZ48Z的Datasheet PDF文件第6页浏览型号AUIRFZ48Z的Datasheet PDF文件第7页 
PD - 97612A  
AUTOMOTIVE GRADE  
AUIRFZ48Z  
AUIRFZ48ZS  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up  
to Tjmax  
D
V(BR)DSS  
RDS(on) max.  
ID  
55V  
11m  
Ω
G
l
l
Lead-Free,RoHSCompliant  
Automotive Qualified *  
61A  
S
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
D
D
S
S
D
D
G
G
D2Pak  
TO-220AB  
AUIRFZ48Z  
AUIRFZ48ZS  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
61  
Units  
A
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
43  
D
240  
91  
DM  
P
@TC = 25°C  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.61  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
73  
120  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested)  
IAR  
See Fig.12a,12b,15,16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
dv/dt  
7.2  
V/ns  
°C  
T
J
-55 to + 175  
Operating Junction and  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting torque, 6-32 or M3 screw  
300  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Typ.  
–––  
Max.  
1.64  
–––  
62  
Units  
°C/W  
Parameter  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/21/11  
1234567...14

中文翻译

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与AUIRFZ48Z相关器件

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AUIRFZ48ZS INFINEON

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 		AUTOMOTIVE GRADE
AUIRFZ48ZSTRL INFINEON

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 		Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFZ48ZSTRR INFINEON

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 		Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRG4BC30S-S INFINEON

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 		Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30S-SL INFINEON

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 		Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRG4BC30SSTRL INFINEON

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 		Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30SSTRR INFINEON

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 		Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30U-S INFINEON

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 		Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30U-SL INFINEON

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 		Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRG4BC30USTRL INFINEON

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 		Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP

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