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AUIRFZ46NSTRR

更新时间： 2024-09-09 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 249K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRFZ46NSTRR 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.13
配置：Single最大漏极电流 (Abs) (ID)：39 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：107 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

AUIRFZ46NSTRR 数据手册

 浏览型号AUIRFZ46NSTRR的Datasheet PDF文件第2页浏览型号AUIRFZ46NSTRR的Datasheet PDF文件第3页浏览型号AUIRFZ46NSTRR的Datasheet PDF文件第4页浏览型号AUIRFZ46NSTRR的Datasheet PDF文件第5页浏览型号AUIRFZ46NSTRR的Datasheet PDF文件第6页浏览型号AUIRFZ46NSTRR的Datasheet PDF文件第7页 
PD - 96434  
AUTOMOTIVE GRADE  
AUIRFZ46NS  
AUIRFZ46NL  
HEXFET® Power MOSFET  
Features  
l
AdvancedPlanarTechnology  
LowOn-Resistance  
l
l
l
l
l
l
l
l
V(BR)DSS  
D
S
55V  
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
RDS(on) max.  
16.5m  
Ω
Fully Avalanche Rated  
G
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
ID(Silicon Limited)  
53A  
39A  
Automotive Qualified *  
ID (Package Limited)  
Description  
Specifically designed for Automotive applications, this  
stripe planar design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve low  
on-resistancepersiliconarea.Thisbenefitcombinedwith  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for, pro-  
videsthedesignerwithanextremelyefficientandreliable  
device for use in Automotive and a wide variety of other  
applications.  
D2Pak  
AUIRFZ46NS  
TO-262  
AUIRFZ46NL  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Max.  
53  
Units  
I
I
I
I
@ T = 25°C  
C
D
D
D
37  
@ T = 100°C  
A
C
39  
@ T = 25°C  
C
180  
3.8  
107  
0.71  
±20  
152  
28  
DM  
Power Dissipation  
P
P
@T = 25°C  
A
D
D
W
@T = 25°C  
Power Dissipation  
C
Linear Derating Factor  
W/°C  
V
V
EAS  
IAR  
Gate-to-Source Voltage  
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
11  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
5.0  
V/ns  
T
T
Operating Junction and  
J
-55 to + 175  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
STG  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.4  
Units  
RθJC  
RθJA  
Junction-to-Case  
°C/W  
Junction-to-Ambient (PCB mounted, steady-state)  
–––  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
04/16/12  
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中文翻译

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