Datasheet > AUIRFZ46NS

AUIRFZ46NS

更新时间： 2024-09-10 03:25:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	249K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRFZ46NS 数据手册

PD - 96434

AUTOMOTIVE GRADE

AUIRFZ46NS

AUIRFZ46NL

HEXFET^®Power MOSFET

Features

AdvancedPlanarTechnology

LowOn-Resistance

V_(BR)DSS

55V

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

R_DS(on)max.

16.5m

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

I_{D(Silicon Limited)}

53A

39A

Automotive Qualified *

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this

stripe planar design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve low

on-resistancepersiliconarea.Thisbenefitcombinedwith

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for, pro-

videsthedesignerwithanextremelyefficientandreliable

device for use in Automotive and a wide variety of other

applications.

D²Pak

AUIRFZ46NS

TO-262

AUIRFZ46NL

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair

conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

@ T = 25°C

180

3.8

107

0.71

±20

152

Power Dissipation

@T = 25°C

Power Dissipation

Linear Derating Factor

W/°C

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Case

°C/W

Junction-to-Ambient (PCB mounted, steady-state)

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

04/16/12

12 3 4 5 6 7...13

中文翻译

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与AUIRFZ46NS相关器件

型号	品牌	获取价格	描述	数据表
AUIRFZ46NSTRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFZ46NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFZ48N	INFINEON	获取价格	汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO
AUIRFZ48Z	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ48ZS	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ48ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFZ48ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRG4BC30S-S	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30S-SL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRG4BC30SSTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP

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