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AUIRFZ48ZSTRL

更新时间： 2024-09-09 13:05:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
14页	258K
描述
Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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技术参数
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替代型号

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AUIRFZ48ZSTRL 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	16 weeks
风险等级：	5.11	其他特性：	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：	120 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	55 V
最大漏极电流 (Abs) (ID)：	61 A	最大漏极电流 (ID)：	61 A
最大漏源导通电阻：	0.011 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	91 W
最大脉冲漏极电流 (IDM)：	240 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AUIRFZ48ZSTRL 数据手册

PD - 97612A

AUTOMOTIVE GRADE

AUIRFZ48Z

AUIRFZ48ZS

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up

to Tjmax

V_(BR)DSS

R_DS(on)max.

I_D

55V

11m

Lead-Free,RoHSCompliant

Automotive Qualified *

61A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

D²Pak

TO-220AB

AUIRFZ48Z

AUIRFZ48ZS

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

240

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.61

± 20

W/°C

Gate-to-Source Voltage

E_AS

120

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested)

I_AR

See Fig.12a,12b,15,16

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

dv/dt

7.2

V/ns

°C

-55 to + 175

Operating Junction and

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting torque, 6-32 or M3 screw

300

10 lbf•in (1.1N•m)

Thermal Resistance

Typ.

–––

Max.

1.64

–––

Units

°C/W

Parameter

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/21/11

12 3 4 5 6 7...14

中文翻译

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AUIRFZ48ZSTRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFZ48ZSTRR	INFINEON	类似代替	Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRFZ48ZS	INFINEON	功能相似	AUTOMOTIVE GRADE
IRFZ48ZSPBF	INFINEON	功能相似	AUTOMOTIVE MOSFET

与AUIRFZ48ZSTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFZ48ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
AUIRG4BC30S-S	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30S-SL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRG4BC30SSTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30SSTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30U-S	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30U-SL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-262AA, ROHS COMP
AUIRG4BC30USTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4BC30USTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP
AUIRG4PC40S-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor

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