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AUIRF1405ZS-7TRL PDF预览

AUIRF1405ZS-7TRL

更新时间： 2024-02-09 20:40:02
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 269K
描述
Power Field-Effect Transistor,

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AUIRF1405ZS-7TRL 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：5.64
Is Samacsys：N湿度敏感等级：1
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRF1405ZS-7TRL 数据手册

 浏览型号AUIRF1405ZS-7TRL的Datasheet PDF文件第2页浏览型号AUIRF1405ZS-7TRL的Datasheet PDF文件第3页浏览型号AUIRF1405ZS-7TRL的Datasheet PDF文件第4页浏览型号AUIRF1405ZS-7TRL的Datasheet PDF文件第5页浏览型号AUIRF1405ZS-7TRL的Datasheet PDF文件第6页浏览型号AUIRF1405ZS-7TRL的Datasheet PDF文件第7页 
AUTOMOTIVEGRADE  
AUIRF1405ZS-7P  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
D
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
VDSS = 55V  
RDS(on) = 4.9mΩ  
G
S
ID = 120A  
Automotive Qualified *  
S (Pin 2, 3, 5, 6, 7)  
G (Pin 1)  
Description  
This HEXFET® Power MOSFET utilizes the  
latest processing techniques to achieve  
extremely low on-resistance per silicon area.  
Additional features of this design are a 175°C  
junction operating temperature, fast switching  
speed and improved repetitive avalanche  
rating.These features combine to make this  
design an extremely efficient and reliable device  
for use in a wide variety of applications.  
D2Pak 7 Pin  
Standard Pack  
Form  
Tube  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
50  
800  
AUIRF1405ZS-7P  
AUIRF1405ZS-7TRL  
AUIRF1405ZS-7P  
D2Pak- 7 Pin  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
Thesearestressratingsonly;andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthose  
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended  
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Units  
150  
ID @ TC = 25°C  
ID @ TC = 100°C  
100  
A
120  
I
D @ TC = 25°C  
590  
IDM  
230  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
1.5  
Linear Derating Factor  
± 20  
250  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
See Fig.12a,12b,15,16  
EAR  
TJ  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300 (1.6mm from case )  
Soldering Temperature, for 10 seconds  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
Max.  
0.65  
40  
Units  
Rθ  
JC  
°C/W  
Rθ  
JA  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015  
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