AUTOMOTIVEGRADE
AUIRF1405ZS-7P
HEXFET® Power MOSFET
Features
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Advanced Process Technology
D
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
VDSS = 55V
RDS(on) = 4.9mΩ
G
S
ID = 120A
Automotive Qualified *
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Description
This HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of applications.
D2Pak 7 Pin
Standard Pack
Form
Tube
Base Part Number
Package Type
Orderable Part Number
Quantity
50
800
AUIRF1405ZS-7P
AUIRF1405ZS-7TRL
AUIRF1405ZS-7P
D2Pak- 7 Pin
Tape and Reel Left
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
Thesearestressratingsonly;andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthose
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Units
150
ID @ TC = 25°C
ID @ TC = 100°C
100
A
120
I
D @ TC = 25°C
590
IDM
230
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
1.5
Linear Derating Factor
± 20
250
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
See Fig.12a,12b,15,16
EAR
TJ
Repetitive Avalanche Energy
mJ
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300 (1.6mm from case )
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
Max.
0.65
40
Units
Rθ
JC
°C/W
Rθ
JA
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 27, 2015