AUIRF1405ZSTRR

更新时间： 2024-01-15 16:16:22

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	314K
描述
HEXFET® Power MOSFET

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中文翻译

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数据手册

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AUIRF1405ZSTRR 数据手册

PD - 97486A

AUIRF1405ZS

AUIRF1405ZL

AUTOMOTIVE GRADE

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to

Tjmax

V_(BR)DSS

55V

4.9m

R_DS(on)max.

I_D

Ω

150A

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features combine

tomakethisdesignanextremelyefficientandreliable

device for use in Automotive applications and a wide

variety of other applications.

D²Pak

AUIRF1405ZS

TO-262

AUIRF1405ZL

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

150

110

600

230

Units

@ T = 25°C

@ T = 100°C

@T = 25°C

Power Dissipation

Linear Derating Factor

1.5

± 20

W/°C

Gate-to-Source Voltage

E_AS

270

420

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.65

Units

°C/W

R_θJC

R_θJA

Junction-to-Case

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

07/01/2010

12 3 4 5 6 7...14

中文翻译

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