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STGW40V60DF PDF预览

STGW40V60DF

更新时间: 2024-11-22 14:57:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
19页 598K
描述
600 V、40 A超高速沟槽栅场截止V系列IGBT

STGW40V60DF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:20 weeks风险等级:2.24
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STGW40V60DF 数据手册

 浏览型号STGW40V60DF的Datasheet PDF文件第2页浏览型号STGW40V60DF的Datasheet PDF文件第3页浏览型号STGW40V60DF的Datasheet PDF文件第4页浏览型号STGW40V60DF的Datasheet PDF文件第5页浏览型号STGW40V60DF的Datasheet PDF文件第6页浏览型号STGW40V60DF的Datasheet PDF文件第7页 
STGFW40V60DF, STGW40V60DF  
Datasheet  
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed  
Features  
Maximum junction temperature: TJ = 175 °C  
Tail-less switching off  
1
3
3
2
2
VCE(sat) = 1.8 V (typ.) @ IC = 40 A  
Tight parameters distribution  
Safe paralleling  
1
1
TO-3PF  
TO-247  
Low thermal resistance  
C(2, TAB)  
Very fast soft recovery antiparallel diode  
G(1)  
Applications  
Welding  
Power factor correction  
UPS  
E(3)  
NG1E3C2T  
Solar inverters  
Chargers  
Description  
These devices are IGBTs developed using an advanced proprietary trench gate  
field-stop structure. These devices are part of the V series IGBTs, which represent  
an optimum compromise between conduction and switching losses to maximize  
the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)  
temperature coefficient and very tight parameter distribution result in safer paralleling  
operation.  
Product status links  
STGFW40V60DF  
STGW40V60DF  
DS9556 - Rev 12 - June 2022  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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