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STGW50HF65SD PDF预览

STGW50HF65SD

更新时间: 2024-02-10 00:34:14
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
13页 1075K
描述
60 A, 650 V, very low drop IGBT with soft and fast recovery diode

STGW50HF65SD 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

STGW50HF65SD 数据手册

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STGW50HF65SD  
STGWT50HF65SD  
60 A, 650 V, very low drop IGBT  
with soft and fast recovery diode  
Datasheet - preliminary data  
Features  
Very low on-state voltage drop  
Low switching off  
High current capability  
Very soft Ultrafast recovery antiparallel diode  
3
2
3
1
2
Applications  
1
PV inverter  
UPS  
TO-3P  
TO-247  
Description  
Figure 1. Internal schematic diagram  
The very low drop IGBT is developed using an  
advanced planar technology, resulting in a device  
with extremely low on-state voltage and limited  
turn-off losses. The overall performance of this  
IGBT makes it ideal for low frequency switches in  
mixed-frequency topologies for power factors1.  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STGW50HF65SD  
STGWT50HF65SD  
GW50HF65SD  
GW50HF65SD  
TO-247  
TO-3P  
Tube  
Tube  
March 2013  
DocID024411 Rev 1  
1/13  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
13  

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