Datasheet > STGW60V60F

STGW60V60F

更新时间： 2023-12-20 18:46:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
15页	436K
描述
600 V、60 A超高速沟槽栅场截止V系列IGBT

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STGW60V60F 数据手册

STGW60V60F

Datasheet

Trench gate field-stop, 600 V, 60 A, very high speed, V series IGBT

in a TO-247 package

Features

•

Maximum junction temperature: T_J= 175 °C

Tail-less switching off

V_CE(sat)= 1.85 V (typ.) @ I_C= 60 A

Tight parameter distribution

Safe paralleling

Low thermal resistance

TO-247

Applications

•

Photovoltaic inverters

C(2, TAB)

Uninterruptible power supply

Welding

G(1)

Power factor correction

Very high frequency converters

Description

E(3)

G1C2TE3

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the V series IGBTs, which represent an optimum

compromise between conduction and switching losses to maximize the efficiency of

very high frequency converters. Furthermore, the positive V_CE(sat)temperature

coefficient and very tight parameter distribution result in safer paralleling operation.

Product status link

STGW60V60F

Product summary

Order code

STGW60V60F

Marking

Package

Packing

GW60V60F

TO-247

Tube

DS9699 - Rev 4 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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