Datasheet > STGW75M65DF2

STGW75M65DF2

更新时间： 2023-12-20 18:45:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
18页	1019K
描述
沟槽栅场截止IGBT，M系列，650 V、75 A，低损耗

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STGW75M65DF2 数据手册

STGW75M65DF2,

STGWA75M65DF2

Trench gate field-stop IGBT, M series 650 V, 75 A low-loss

in TO-247 and TO-247 long leads packages

Datasheet - production data

Features



6 µs of short-circuit withstand time

V_CE(sat)= 1.65 V (typ.) @ I_C= 75 A

Tight parameter distribution

Safer paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

Soft and very fast recovery antiparallel diode

Maximum junction temperature: T_J= 175 °C

Applications



Motor control

UPS

PFC

Figure 1: Internal schematic diagram

General purpose inverter

C (2)

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. The devices are part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

G (1)

Sc12850_no_tab

E (3)

Table 1: Device summary

Order code

Marking

Package

TO-247

Packing

STGW75M65DF2

STGWA75M65DF2

G75M65DF2

Tube

TO-247 long leads

May 2017

DocID028695 Rev 3

1/18

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...18

中文翻译

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