Datasheet > STGW8M120DF3

STGW8M120DF3

更新时间： 2023-12-20 18:44:38

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
17页	1005K
描述
1200 V、8 A沟槽栅场截止低损耗M系列IGBT

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STGW8M120DF3 数据手册

STGW8M120DF3,

STGWA8M120DF3

Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss

Datasheet - production data

Features



10 µs of short-circuit withstand time

V_CE(sat)= 1.85 V (typ.) @ I_C= 8 A

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Applications



Industrial drives

UPS

Solar

Welding

Figure 1: Internal schematic diagram

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the M series

IGBTs, which represent an optimal balance

between inverter system performance and

efficiency where low-loss and short-circuit

functionality are essential. Furthermore, the

positive V_CE(sat)temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

TO-247

Packing

STGW8M120DF3

STGWA8M120DF3

G8M120DF3

Tube

TO-247 long leads

October 2017

DocID029337 Rev 3

1/17

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...17

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