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STGW45HF60WDI PDF预览

STGW45HF60WDI

更新时间: 2024-10-01 09:00:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管双极性晶体管
页数 文件大小 规格书
16页 496K
描述
45 A, 600 V ultra fast IGBT with low drop diode

STGW45HF60WDI 技术参数

生命周期:Not Recommended零件包装代码:TO-247
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.28最大集电极电流 (IC):70 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5.75 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

STGW45HF60WDI 数据手册

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STGW45HF60WDI  
45 A, 600 V ultra fast IGBT with low drop diode  
Features  
Improved E at elevated temperature  
off  
Low V soft recovery antiparallel diode  
F
Applications  
Welding  
3
Induction heating  
Resonant converters  
2
1
TO-247  
Description  
The STGW45HF60WDI is based on a new  
advanced planar technology concept to yield an  
IGBT with more stable switching performance  
Figure 1.  
Internal schematic diagram  
(E versus temperature, as well as lower  
off)  
conduction losses. The device is tailored to high  
switching frequency operation (over 100 kHz).  
Table 1.  
Device summary  
Order code  
Marking  
Package  
TO-247  
TO-247 long leads  
Packaging  
STGW45HF60WDI  
STGWA45HF60WDI  
GW45HF60WDI  
45HF60WDI  
Tube  
December 2010  
Doc ID 16091 Rev 2  
1/16  
www.st.com  
16  

STGW45HF60WDI 替代型号

型号 品牌 替代类型 描述 数据表
STGW39NC60VD STMICROELECTRONICS

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