Datasheet > STGW80V60DF

STGW80V60DF

更新时间： 2023-12-20 18:45:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
18页	1597K
描述
600 V、80 A超高速沟槽栅场截止V系列IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STGW80V60DF 数据手册

STGW80V60DF

STGWT80V60DF

Trench gate field-stop IGBT, V series

600 V, 80 A very high speed

Datasheet

production data

Features

TAB

• Maximum junction temperature: T_J= 175 °C

• Tail-less switching off

• V_CE(sat)= 1.85 V (typ.) @ I_C= 80 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

TO-247

TO-3P

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

Figure 1. Internal schematic diagram

C (2 or TAB)

• Power factor correction

• Very high frequency converters

Description

G (1)

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V_CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

E (3)

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW80V60DF

STGWT80V60DF

GW80V60DF

TO-247

TO-3P

Tube

GWT80V60DF

January 2014

DocID024362 Rev 2

1/18

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...18

中文翻译

下载PDF

与STGW80V60DF相关器件

型号	品牌	获取价格	描述	数据表
STGW80V60F	STMICROELECTRONICS	获取价格	600 V、80 A超高速沟槽栅场截止V系列IGBT
STGW8M120DF3	STMICROELECTRONICS	获取价格	1200 V、8 A沟槽栅场截止低损耗M系列IGBT
STGWA100H65DFB2	STMICROELECTRONICS	获取价格	Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads pa
STGWA15H120DF2	STMICROELECTRONICS	获取价格	1200 V、15 A高速沟槽栅场截止H系列IGBT
STGWA15H120F2	STMICROELECTRONICS	获取价格	1200 V、15 A高速沟槽栅场截止H系列IGBT
STGWA15M120DF3	STMICROELECTRONICS	获取价格	1200 V、15 A沟槽栅场截止低损耗M系列IGBT
STGWA19NC60HD	STMICROELECTRONICS	获取价格	31 A, 600 V, very fast IGBT with Ultrafast diode
STGWA20H65DFB2	STMICROELECTRONICS	获取价格	Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads packa
STGWA20HP65FB2	STMICROELECTRONICS	获取价格	Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long leads packa
STGWA20IH65DF	STMICROELECTRONICS	获取价格	Trench gate field-stop 650 V, 20 A, soft-switching IH series IGBT in a TO-247 long leads p