Datasheet > STGW80H65DFB-4

STGW80H65DFB-4

更新时间： 2023-12-20 18:44:06

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
15页	291K
描述
650 V、80 A高速沟槽栅场截止HB系列IGBT

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STGW80H65DFB-4 数据手册

STGW80H65DFB-4

Datasheet

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

Features

•

V_CE(sat)= 1.6 V (typ.) @ I_C= 80 A

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

Tight parameter distribution

Safe paralleling

TO247-4

Low thermal resistance

Very fast soft recovery antiparallel diode

Excellent switching performance thanks to the extra driving kelvin pin

C(1, TAB)

G(4)

K(3)

Applications

•

Photovoltaic inverters

High frequency converters

E(2)

NG4K3E2C1_TAB

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. A faster switching event can be achieved by

the Kelvin pin, which separates power path from driving signal. Furthermore, the

slightly positive V_CE(sat)temperature coefficient and very tight parameter distribution

result in safer paralleling operation.

Product status link

STGW80H65DFB-4

Product summary

Order code

Marking

STGW80H65DFB-4

G80H65DFB

TO247-4

Package

Packing

Tube

DS11137 - Rev 5 - December 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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