STGW50NB60H

更新时间： 2024-01-16 21:04:40

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
5页	53K
描述
N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT

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中文翻译

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数据手册

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STGW50NB60H 数据手册

STGW50NB60H

N-CHANNEL 50A - 600V TO-247

PowerMESH IGBT

PRELIMINARY DATA

TYPE

STGW50NB60H

V_CES

V_CE(sat)

< 2.8 V

I_C

50 A

600 V

■

HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

■

LOW ON-VOLTAGE DROP (V_CESAT

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

VERY HIGH FREQUENCY OPERATION

OFF LOSSES INCLUDE TAIL CURRENT

)

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

TO-247

PowerMESH

IGBTs,

with

outstanding

perfomances. The suffix "H" identifies a family

optimized to achieve very low switching times for

high frequency applications (<120kHz).

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

WELDING EQUIPMENTS

SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_ECR

V_GE

I_C

Parameter

Value

600

Unit

Collector-Emitter Voltage (V_GS= 0)

Emitter-Collector Voltage

Gate-Emitter Voltage

± 20

100

Collector Current (continuous) at T_c= 25 C

I_C

Collector Current (continuous) at T_c= 100 C

_CM(•)

Collector Current (pulsed)

400

250

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/5

June 1999

12 3 4 5

中文翻译

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与STGW50NB60H相关器件

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STGW80H65DFB-4	STMICROELECTRONICS	获取价格	650 V、80 A高速沟槽栅场截止HB系列IGBT