Datasheet > STGW80V60F

STGW80V60F

更新时间： 2023-12-20 18:44:02

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
19页	1642K
描述
600 V、80 A超高速沟槽栅场截止V系列IGBT

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中文翻译

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数据手册

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STGW80V60F 数据手册

STGFW80V60F, STGW80V60F,

STGWT80V60F

Trench gate field-stop IGBT, V series

600 V, 80 A very high speed

Datasheet

production data

Features

• Maximum junction temperature: T_J= 175 °C

• Tail-less switching off

• V_CE(sat)= 1.85 V (typ.) @ I_C= 80 A

• Tight parameters distribution

• Safe paralleling

TAB

TO-3PF

• Low thermal resistance

Applications

TO-247

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

TO-3P

Figure 1. Internal schematic diagram

C (2 or TAB)

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V_CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

G (1)

E (3)

Table 1. Device summary

Order code

Marking

Package

Packaging

STGFW80V60F

STGW80V60F

STGWT80V60F

GFW80V60F

GW80V60F

GWT80V60F

TO-3PF

TO-247

TO-3P

Tube

May 2014

DocID026386 Rev 1

1/19

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...19

中文翻译

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