Datasheet > STGW50H65DFB2-4

STGW50H65DFB2-4

更新时间： 2023-12-20 18:45:28

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
15页	312K
描述
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package

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STGW50H65DFB2-4 数据手册

STGW50H65DFB2-4

Datasheet

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT

in a TO247-4 package

Features

•

Maximum junction temperature: T_J= 175 °C

Low V_CE(sat)= 1.55 V(typ.) @ I_C= 50 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

TO247-4

Positive V_CE(sat)temperature coefficient

Excellent switching performance thanks to the extra driving kelvin pin

C(1, TAB)

Applications

G(4)

K(3)

•

Welding

Power factor correction

UPS

E(2)

Solar inverters

Chargers

NG4K3E2C1_TAB

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced

proprietary trench gate field-stop structure. The performance of the HB2 series is

optimized in terms of conduction, thanks to a better V_CE(sat)behavior at low current

values, as well as in terms of reduced switching energy. A very fast soft recovery

diode is co-packaged in antiparallel with the IGBT. The result is a product specifically

designed to maximize efficiency for a wide range of fast applications.

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STGW50H65DFB2-4

Product summary

Order code

Marking

STGW50H65DFB2-4

G50H65DFB2

TO247-4

Package

Packing

Tube

DS13420 - Rev 1 - August 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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