Datasheet > STGW60H65DFB

STGW60H65DFB

更新时间： 2023-12-20 18:45:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
21页	685K
描述
650 V、60 A高速沟槽栅场截止HB系列IGBT

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STGW60H65DFB 数据手册

STGW60H65DFB, STGWA60H65DFB,

STGWT60H65DFB

Datasheet

Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features

•

Maximum junction temperature: T_J= 175 °C

High speed switching series

Minimized tail current

TO-247

TO-247 long leads

Low saturation voltage: V_CE(sat)= 1.6 V (typ.) @ I_C= 60 A

Tight parameter distribution

TAB

Safe paralleling

Positive V_CE(sat)temperature coefficient

Low thermal resistance

TO-3P

Very fast soft recovery antiparallel diode

Applications

•

Photovoltaic inverters

High-frequency converters

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the new HB series of IGBTs, which

represent an optimum compromise between conduction and switching loss to

maximize the efficiency of any frequency converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGW60H65DFB

STGWT60H65DFB

STGWA60H65DFB

DS9535 - Rev 8 - July 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

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STGW60H65DFB 替代型号

型号	品牌	替代类型	描述	数据表
IRGP4078DPBF	INFINEON	功能相似	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRGP4063D1PBF	INFINEON	功能相似	Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,

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STGW60H65FB	STMICROELECTRONICS	获取价格	650 V、60 A高速沟槽栅场截止HB系列IGBT
STGW60V60DF	STMICROELECTRONICS	获取价格	600 V、60 A超高速沟槽栅场截止V系列IGBT
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STGW75M65DF2	STMICROELECTRONICS	获取价格	沟槽栅场截止IGBT，M系列，650 V、75 A，低损耗
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STGW80V60DF	STMICROELECTRONICS	获取价格	600 V、80 A超高速沟槽栅场截止V系列IGBT
STGW80V60F	STMICROELECTRONICS	获取价格	600 V、80 A超高速沟槽栅场截止V系列IGBT