Datasheet > STGW60V60DF

STGW60V60DF

更新时间： 2023-12-20 18:44:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
20页	1625K
描述
600 V、60 A超高速沟槽栅场截止V系列IGBT

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STGW60V60DF 数据手册

STGW60V60DF, STGWA60V60DF

STGWT60V60DF

Trench gate field-stop IGBT, V series

600 V, 60 A very high speed

Datasheet

production data

Features

• Maximum junction temperature: T_J= 175 °C

• Tail-less switching off

• V_CE(sat)= 1.85 V (typ.) @ I_C= 60 A

• Tight parameter distribution

• Safe paralleling

ꢂ

ꢁ

ꢀ

TO-247

TO-247 long leads

TAB

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

TO-3P

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

Figure 1. Internal schematic diagram

C (2 or TAB)

• Power factor correction

• Very high frequency converters

Description

G (1)

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the V series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of very high

frequency converters. Furthermore, a positive

E (3)

V_CE(sat)temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1. Device summary

Order code

Marking

Package

Packing

STGW60V60DF

STGWA60V60DF

STGWT60V60DF

GW60V60DF

G60V60DF

TO-247

TO-247 long leads

TO-3P

Tube

GWT60V60DF

September 2016

DocID024154 Rev 7

1/20

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...20

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