Datasheet > STGW40V65DF

STGW40V65DF

更新时间： 2024-10-01 21:11:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
9页	351K
描述
IGBT

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中文翻译

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技术参数
数据手册

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STGW40V65DF 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

STGW40V65DF 数据手册

STGW40V65DF

650 V, 40 A very high speed

trench gate field-stop IGBT

Datasheet − preliminary data

Features

■ Maximum junction temperature : T_J= 175 °C

■ Very high speed switching

■ Negligible tail current

■ Low saturation voltage: V_CE(sat)= 1.9 V (typ.)

@ I_C= 40 A

■ Tight parameters distribution

■ Safe paralleling

■ Low thermal resistance

■ Very fast soft recovery antiparallel diode

■ Lead free package

TO-247

Figure 1.

Internal schematic diagram

Applications

■ Photovoltaic inverters

■ Uninterruptible power supply

■ Welding

■ Power factor correction

■ Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the "V" series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V_CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

Table 1.

Order code

STGW40V65DF

Device summary

Marking

Package

TO-247

Packaging

GW40V65DF

Tube

September 2012

Doc ID 023688 Rev 1

1/9

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...9

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