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STB25NM50N_07 PDF预览

STB25NM50N_07

更新时间: 2024-11-02 06:14:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 515K
描述
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET

STB25NM50N_07 数据手册

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STB25NM50N/-1 - STF25NM50N  
STP25NM50N - STW25NM50N  
N-channel 500V - 0.11- 22A - TO-220 /FP- I2/D2PAK - TO-247  
Second generation MDmesh™ Power MOSFET  
General features  
VDSS  
(@Tjmax)  
Type  
RDS(on)  
ID  
3
2
3
1
2
1
STB25NM50N  
STB25NM50N-1  
STF25NM50N  
STP25NM50N  
STW25NM50N  
550V  
550V  
550V  
550V  
550V  
<0.140  
<0.140Ω  
<0.140Ω  
<0.140Ω  
<0.140Ω  
22A  
22A  
22A(1)  
TO-220  
TO-220FP  
3
1
22A  
D²PAK  
22A  
1. Limited only by maximum temperature allowed  
3
2
1
TO-247  
100% avalanche tested  
I²PAK  
Low input capacitance and gate charge  
Low gate input resistancel  
Internal schematic diagram  
Description  
This series of devices is realized with the second  
generation of MDmesh™ Technology. This  
revolutionary MOSFET associates a new vertical  
structure to the Company’s strip layout to yield  
one of the world’s lowest on-resistance and gate  
charge. It is therefore suitable for the most  
demanding high efficiency converters  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB25NM50N  
STB25NM50N-1  
STF25NM50N  
STP25NM50N  
STW25NM50N  
B25NM50N  
B25NM50N-1  
F25NM50N  
P25NM50N  
W25NM50N  
PAK  
PAK  
Tape & reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
January 2007  
Rev 12  
1/18  
www.st.com  
18  

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