Datasheet > SiA4371EDJ

SiA4371EDJ

更新时间： 2024-11-07 14:53:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	162K
描述
P-Channel 30 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiA4371EDJ 数据手册

SiA4371EDJ

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

PowerPAK^®SC-70-6L Single

• 100 % R_gtested

• Thermally enhanced PowerPAK^®SC-70

package

- Small footprint area

- Low on-resistance

• Typical ESD protection: 3000 V (HBM)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

Marking code: KD

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

• Power management for portable and

consumer

-30

0.045

0.053

0.081

10.6

R_DS(on)max. (Ω) at V_GS= -10 V

• Load switch

R_DS(on)max. (Ω) at V_GS= -4.5 V

• Charger switches

• Battery switches

R_DS(on)max. (Ω) at V_GS= -2.5 V

Q_gtyp. (nC)

_D(A) ^{a, e}

-9

Configuration

Single

P-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK SC-70

Lead (Pb)-free and halogen-free

SiA4371EDJ-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

-30

UNIT

V_DS

V_GS

_C= 25 °C

-9 ^e

-6.4 ^{b, c}

-5.1 ^{b, c}

-20

-9 ^e

-2.4 ^{b, c}

T_C= 70 °C

T_A=25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous source-drain diode current

15.6

Maximum power dissipation

P_D

2.9 ^{b, c}

1.9 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{c, d}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, d}

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

t ≤ 5 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. Maximum under steady state conditions is 80 °C/W

e. Package limited

S21-1125-Rev. A, 22-Nov-2021

Document Number: 63160

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SiA4371EDJ相关器件

型号	品牌	获取价格	描述	数据表
SIA437DJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA440DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiA441DJ	VISHAY	获取价格	P-Channel 40 V (D-S) MOSFET
SIA443DJ-T1-E3	VISHAY	获取价格	Transistor
SIA443DJ-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 20V 6.7A 6-Pin PowerPAK SC-70 T/R
SiA4446DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SIA444DJT	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA444DJT_11	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIA444DJT-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiA445EDJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET