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SI1431DH-T1-GE3 PDF预览

SI1431DH-T1-GE3

更新时间: 2024-09-14 21:19:59
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
6页 104K
描述
TRANSISTOR 1700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal

SI1431DH-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):1.7 A
最大漏极电流 (ID):1.7 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.45 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:PURE MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI1431DH-T1-GE3 数据手册

 浏览型号SI1431DH-T1-GE3的Datasheet PDF文件第2页浏览型号SI1431DH-T1-GE3的Datasheet PDF文件第3页浏览型号SI1431DH-T1-GE3的Datasheet PDF文件第4页浏览型号SI1431DH-T1-GE3的Datasheet PDF文件第5页浏览型号SI1431DH-T1-GE3的Datasheet PDF文件第6页 
Si1431DH  
Vishay Siliconix  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 2.0  
- 1.6  
Definition  
0.200 at VGS = - 10 V  
0.355 at VGS = - 4.5 V  
TrenchFET® Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
- 30  
APPLICATIONS  
Load Switch  
- Notebook PC  
- Servers  
SOT-363  
SC-70 (6-LEADS)  
D
D
G
1
2
3
6
D
D
S
Marking Code  
5
4
BF XX  
Lot Traceability  
and Date Code  
Part # Code  
Top View  
Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free)  
Si1431DH-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
- 30  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TA = 25 °C  
TA = 85 °C  
- 2.0  
- 1.5  
- 1.7  
- 1.2  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
Pulsed Drain Current  
Continuous Diode Current (Diode Conduction)a  
IDM  
IS  
- 8  
- 1.2  
1.45  
0.75  
- 0.8  
0.95  
0.5  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 85 °C  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
65  
Maximum  
Unit  
t 5 s  
85  
130  
50  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
Steady State  
Steady State  
105  
40  
°C/W  
RthJF  
Note:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 72694  
S10-0646-Rev. B, 22-Mar-10  
www.vishay.com  
1

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