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SI1472DH-T1-GE3 PDF预览

SI1472DH-T1-GE3

更新时间: 2024-11-21 21:19:47
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
7页 111K
描述
TRANSISTOR 4200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal

SI1472DH-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):4.2 A
最大漏源导通电阻:0.057 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:PURE MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI1472DH-T1-GE3 数据手册

 浏览型号SI1472DH-T1-GE3的Datasheet PDF文件第2页浏览型号SI1472DH-T1-GE3的Datasheet PDF文件第3页浏览型号SI1472DH-T1-GE3的Datasheet PDF文件第4页浏览型号SI1472DH-T1-GE3的Datasheet PDF文件第5页浏览型号SI1472DH-T1-GE3的Datasheet PDF文件第6页浏览型号SI1472DH-T1-GE3的Datasheet PDF文件第7页 
Si1472DH  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
5.6a  
4.7  
Qg (Typ.)  
Definition  
0.057 at VGS = 10 V  
0.082 at VGS = 4.5 V  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
30  
5.5  
Compliant to RoHS Directive 2002/95/EC  
SOT-363  
SC-70 (6-LEADS)  
APPLICATIONS  
Load Switch for Portable Devices  
D
D
G
1
6
5
D
D
S
Marking Code  
AL XX  
2
3
Lot Traceability  
and Date Code  
4
Part # Code  
Top View  
Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free)  
Si1472DH-T1-GE3 (Lead (Pb-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
5.6  
4.5  
Continuous Drain Current (TJ = 150 °C)a  
ID  
4.2b, c  
3.4b, c  
15  
A
Pulsed Drain Current  
Avalanche Current  
IDM  
IAS  
10  
L = 0.1 mH  
TC = 25 °C  
Repetitive Avalanche Energy  
EAS  
5
mJ  
A
2.3  
1.3b, c  
Continuous Source-Drain Diode Current  
IS  
TA = 25 °C  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.8  
1.8  
Maximum Power Dissipationa  
PD  
W
1.5b, c  
1.0b, c  
- 55 to 150  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
60  
Maximum  
Unit  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
t 5 s  
80  
45  
°C/W  
Steady  
RthJF  
34  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under steady state conditions is 125 °C/W.  
Document Number: 73891  
S10-0646-Rev. C, 22-Mar-10  
www.vishay.com  
1

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