Datasheet > SI1488DH

SI1488DH

更新时间： 2024-09-15 06:11:31

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威世 - VISHAY		/
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描述
N-Channel 20-V (D-S) MOSFET

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SI1488DH 数据手册

Si1488DH

Vishay Siliconix

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

Q_g(Typ)

100 % R_g& UIS Tested

6.1^a

5.7

0.049 at V_GS= 4.5 V

0.056 at V_GS= 2.5 V

0.065 at V_GS= 1.8 V

RoHS

APPLICATIONS

COMPLIANT

6.0

•

Load Switch for Portable Devices

5.3

SOT-363

SC-70 (6-LEADS)

Marking Code

AG XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

6.1

4.9

Continuous Drain Current (T_J= 150 °C)^a

I_D

4.6^{b, c}

3.7^{b, c}

T_A= 25 °C

T_A= 70 °C

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

E_AS

Repetitive Avalanche Energy

T_C= 25 °C

T_A= 25 °C

2.3

1.3^{b, c}

I_S

Continuous Source-Drain Diode Current

_C= 25 °C

_C= 70 °C

_A= 25 °C

2.8

1.8

Maximum Power Dissipation^a

P_D

1.5^{b, c}

1.0^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 sec

°C/W

R_thJF

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 73788

S-61085–Rev. C, 19-Jun-06

www.vishay.com

12 3 4 5 6 7

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