Datasheet > SI1501DL

SI1501DL

更新时间： 2024-11-05 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	61K
描述
Complementary 20-V (D-S) Low-Threshold MOSFET

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SI1501DL 数据手册

Si1501DL

Vishay Siliconix

Complementary 20-V (D-S) Low-Threshold MOSFET

PRODUCT SUMMARY

Channel

V_DS(V)

r_DS(on)

(ꢀ )

I_D(mA)

2.0 @ V = 4.5 V

250

150

N-Channel

2.5 @ V = 2.5 V

3.8 @ V = −4.5 V

−180

−100

P-Channel

−20

5.0 @ V = −2.5 V

SOT-363

SC-70 (6-Leads)

Marking Code

RE XX

Lot Traceability

and Date Code

Part # Code

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

250

200

500

= 25_C

= 70_C

−180

−140

−500

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

= 25_C

= 70_C

0.20

0.13

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

625 (Total)

_C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 71303

S-03840—Rev. B, 21-May-01

www.vishay.com S

12 3 4 5 6

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