SI1551DL-T1-E3

更新时间： 2024-11-09 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	110K
描述
Complementary 20-V (D-S) MOSFET

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数据手册
替代型号

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SI1551DL-T1-E3 数据手册

Si1551DL

Vishay Siliconix

Complementary 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

Qg (Typ)

1.9 @ V = 4.5 V

0.30

0.22

N-Channel

P-Channel

3.7 @ V = 2.7 V

0.72

4.2 @ V = 2.5 V

0.21

0.995 @ V = −4.5 V

−0.44

−0.34

−0.32

1.600 @ V = −2.7 V

−20

0.52

1.800 @ V = −2.5 V

SOT-363

SC-70 (6-LEADS)

Marking Code

RD XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1551DL-T1

Si1551DL-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

5 secs Steady State

5 secs

Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"12

= 25_C

= 85_C

0.30

0.22

0.29

0.21

−0.44

−0.31

−0.41

−0.30

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

0.6

−1.0

Continuous Source Current (Diode Conduction)

0.25

0.30

0.16

0.23

0.27

0.14

−0.25

0.30

−0.23

0.27

= 25_C

= 85_C

Maximum Power Dissipation

0.16

0.14

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

360

400

300

415

460

350

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71255

S-42353—Rev. C, 20-Dec-04

www.vishay.com

12 3 4 5 6 7 8

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SI1551DL-T1-E3 替代型号

型号	品牌	替代类型	描述	数据表
SI1553CDL-T1-GE3	VISHAY	类似代替	TRANSISTOR 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FRE

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